? semiconductor components industries, llc, 2002 march, 2002 rev. 2 1 publication order number: bas19lt1/d bas19lt1, bas20lt1, bas21lt1 preferred devices high voltage switching diode ? device marking: bas19lt1 = jp device marking: bas20lt1 = jr device marking: bas21lt1 = js maximum ratings rating symbol value unit continuous reverse voltage bas19 bas20 bas21 v r 120 200 250 vdc continuous forward current i f 200 madc peak forward surge current i fm(surge) 625 madc thermal characteristics characteristic symbol max unit total device dissipation fr5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance junction to ambient r ja 556 c/w total device dissipation alumina substrate (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance junction to ambient r ja 417 c/w junction and storage temperature range t j , t stg 55 to +150 c 1. fr5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. high voltage switching diode device package shipping ordering information bas19lt1 sot23 3000/tape & reel sot23 case 318 style 8 2 1 preferred devices are recommended choices for future use and best overall value. 3 cathode 1 anode jx m marking diagram jx = specific device code x = p, r or s m = date code bas20lt1 sot23 3000/tape & reel bas21lt1 sot23 3000/tape & reel 3 http://onsemi.com
bas19lt1, bas20lt1, bas21lt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit reverse voltage leakage current (v r = 100 vdc) bas19lt1 (v r = 150 vdc) bas20lt1 (v r = 200 vdc) bas21lt1 (v r = 100 vdc, t j = 150 c) bas19lt1 (v r = 150 vdc, t j = 150 c) bas20lt1 (v r = 200 vdc, t j = 150 c) bas21lt1 i r 0.1 0.1 0.1 100 100 100 m adc reverse breakdown voltage (i br = 100 m adc) bas19lt1 (i br = 100 m adc) bas20lt1 (i br = 100 m adc) bas21lt1 v (br) 120 200 250 vdc forward voltage (i f = 100 madc) (i f = 200 madc) v f 1.0 1.25 vdc diode capacitance (v r = 0, f = 1.0 mhz) c d 5.0 pf reverse recovery time (i f = i r = 30 madc, i r(rec) = 3.0 madc, r l = 100) t rr 50 ns notes: 1. a 2.0 k w variable resistor adjusted for a forward current (i f ) of 30 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 30 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 w 0.1 m f d.u.t. v r 100 m h 0.1 m f 50 w output pulse generator 50 w input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 3.0 ma output pulse (i f = i r = 30 ma; measured at i r(rec) = 3.0 ma) i f input signal figure 1. recovery time equivalent test circuit figure 2. forward voltage figure 3. reverse leakage 7000 reverse voltage (v) 5000 3000 5 0 2 1 6000 4000 6 5 10 20 50 100 200 1 2 3 4 30 0 t a = 155 c t a = 25 c t a = 55 c reverse current (na) forward current (ma) t a = 55 c 1 10 100 1000 1 200 400 600 800 1000 1200 forward voltage (mv) 155 c 25 c
bas19lt1, bas20lt1, bas21lt1 http://onsemi.com 3 information for using the sot23 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot23 power dissipation the power dissipation of the sot23 is a function of the pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sot23 package, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. p d = 150 c 25 c 556 c/w = 225 milliwatts the 556 c/w for the sot23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. there are other alternatives to achieving higher power dissipation from the sot23 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
bas19lt1, bas20lt1, bas21lt1 http://onsemi.com 4 package dimensions sot23 (to236) case 31809 issue ah style 8: pin 1. anode 2. no connection 3. cathode dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0385 0.0498 0.99 1.26 d 0.0140 0.0200 0.36 0.50 g 0.0670 0.0826 1.70 2.10 h 0.0040 0.0098 0.10 0.25 j 0.0034 0.0070 0.085 0.177 k 0.0180 0.0236 0.45 0.60 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.0984 2.10 2.50 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maxiumum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318-01, -02, and -06 obsolete, new standard 318-09. 1 3 2 a l bs v g d h c k j on semiconductor is a trademark and is a registered trademark of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circui t, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may b e provided in scillc data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its paten t rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bas19lt1/d thermal clad is a registered trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
